PART |
Description |
Maker |
F30D60 F30D30 F30D40 F30D50 |
POWER RECTIFIERS(30A/300-600V) POWER RECTIFIERS(30A,300-600V)
|
MOSPEC[Mospec Semiconductor]
|
U12C30 U12C40 U12C50 U12C60 |
POWER RECTIFIERS(12A/300-600V) POWER RECTIFIERS(12A,300-600V)
|
MOSPEC SEMICONDUCTOR CORP. MOSPEC[Mospec Semiconductor]
|
F08A60 F08A30 F08A40 F08A50 |
FAST RECOVERY RECRIFIERS(8A,300-600V) FAST RECOVERY RECRIFIERS(8A/300-600V)
|
MOSPEC[Mospec Semiconductor]
|
IRFBC30AS IRFBC30L IRFBC30AL IRFBC30ASTRL IRFBC30A |
600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 600V Single N-Channel HEXFET Power MOSFET in a TO-262 package HEXFET? Power MOSFET Power MOSFET(Vdss=600V/ Rds(on)max=2.2ohm/ Id=3.6A) 600V,3.6A,N-Channel HEXFET Power MOSFET for SMPS(600V,3.6A,N沟道 HEXFET 功率MOS场效应管,用于开关模式电 Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A) 功率MOSFET(减振钢板基本\u003d 600V电压的Rds(on)最大值\u003d 2.2ohm,身份证\u003d 3.6A
|
IRF[International Rectifier] International Rectifier, Corp.
|
STGB3NB60SD STGB3NB60SDT4 |
N-CHANNEL 3A - 600V D2PAK Power MESHIGBT N沟道3A 600V的D2PAK封装IGBT的电力网格⑩ Transient Surge Protection Thyristor; Package/Case:6-SOIC; Current, It av:2.2A; Reel Quantity:1500; Capacitance:100pF; Forward Current:5A; Forward Voltage:12V; Holding Current:100uA; Mounting Type:Surface Mount N沟道3A 600V的IGBT的采用D2PAK POWERMESH N-CHANNEL 3A - 600V D2PAK Power MESH IGBT N-CHANNEL 3A - 600V D2PAK POWERMESH IGBT N-CHANNEL 3A - 600V D2PAK Power MESH⑩ IGBT
|
ST Microelectronics STMicroelectronics N.V. STMICROELECTRONICS[STMicroelectronics]
|
APT6030BN APT6033BN |
POWER MOS IV 600V 22.0A 0.33 Ohm / 600V 23.0A 0.30 Ohm N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
ARF466FL ARF466FL10 |
RF MOSFET for 100-300 Volt Operation; P(out) (W): 300; fO (MHz): 45; VDD (V): 200; BVDSS (V): 1000; RqJC (ºC/Watt): 0.27; Case Style: T2; COO: A-E VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET RF POWER MOSFETs N-CHANNEL ENHANCEMENT MODE
|
Microsemi, Corp. Microsemi Corporation
|
IRFBC20L IRFBC20S |
Power MOSFET(Vdss=600V/ Rds(on)=4.4ohm/ Id=2.2A) Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=2.2A) 600V Single N-Channel HEXFET Power MOSFET in a TO-262 package 600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
|
IRF[International Rectifier]
|
IRFBC20 |
2.2 A, 600 V, 4.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=2.2A) 600V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
|
IRF[International Rectifier]
|
SSW4N60B SSI4N60B SSI4N60BTU SSW4N60BTM |
600V N-Channel MOSFET 4 A, 600 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263 600V N-Channel B-FET / Substitute of SSI4N60A 600V N-Channel B-FET / Substitute of SSW4N60A
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|